HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6549-B

Issued Date : 1996.11.25

Revised Date : 2000.10.01

Page No. : 1/4

HSMC Product Specification

HSB764

PNP EPITAXIAL PLANAR TRANSISTOR

Description

Voltage regulator, Relay driver, electrical equipment application.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 900 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -60 V

VCEO Collector to Emitter Voltage .................................................................................... -50 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current ............................................................................................................. -1 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-60

V

IC=-100uA, IE=0

BVCEO

-50

V

IC=-1mA, IB=0

BVEBO

-5

V

IE=-10uA, IC=0

ICBO

-1

uA

VCB=-50V, IE=0

IEBO

-1

uA

VEB=-4V, IC=0

*VCE(sat)

-700

mV

IC=-500mA, IB=-50mA

*VBE(sat)

-1.2

V

IC=-500mA, IB=-50mA

*hFE1

60

320

VCE=-2V, IC=-50mA

*hFE2

30

VCE=-2V, IC=-1A

fT

150

MHz

VCE=-10V, IC=-50mA

Cob

20

pF

VCB=-10V, IE=0, f=1MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification of hFE1

Rank

D

E

F

Range

60-120

100-200

160-320