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STTH2R02UY 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STTH2R02UY
상세설명  Automotive ultrafast recovery diode
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STTH2R02UY 데이터시트(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH2R02-Y
4/8
Doc ID 17934 Rev 1
Figure 5.
Junction capacitance versus
reverse applied voltage
(typical values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
1
10
100
1
10
100
1000
C(pF)
F=1MHz
V
osc=30mVRMS
T
j=25°C
VR(V)
0
10
20
30
40
50
60
10
100
1000
Q
RR(nC)
I
F=2A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
Figure 7.
Reverse recovery time versus dIF/dt
(typical values)
Figure 8.
Peak reverse recovery current
versus dIF/dt (typical values)
0
10
20
30
40
50
60
10
100
1000
t
RR(ns)
I
F=2A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
0
1
2
3
4
5
6
10
100
1000
I
RM(A)
I
F=2A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
Figure 9.
Dynamic parameters versus
junction temperature
Figure 10.
Thermal resistance, junction to
ambient, versus copper surface
under each lead
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
Q
RR;IRM [Tj]/ QRR;IRM [Tj=125°C]
I
RM
Q
RR
I
F=2A
V
R=160V
Tj(°C)
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R
th(j-a)(°C/W)
SCU(cm²)
Epoxy printed circuit board,
copper thickness = 35 µm



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