HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6730-B

Issued Date : 1997.08.13

Revised Date : 1999.08.01

Page No. : 1/3

HSMC Product Specification

HTIP125

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP125 is designed for medium power linear and switching

applications.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) .................................................................................... 65 W

Total Power Dissipation (Ta=25

°C) ...................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage ..................................................................................... -60 V

BVCEO Collector to Emitter Voltage.................................................................................. -60 V

BVEBO Emitter to Base Voltage .......................................................................................... -5 V

IC Collector Current ............................................................................................................. -5 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-60

-

-

V

IC=-1mA, IE=0

*BVCEO

-60

-

-

V

IC=-100mA, IB=0

ICEO

-

-

-0.5

mA

VCE=-30V, IE=0

ICBO

-

-

-0.2

mA

VCE=-60V, IB=0

IEBO

-

-

-2

mA

VEB=-5V, IC=0

*VCE(sat1)

-

-

-2

V

IC=-3A, IB=-12mA

*VCE(sat)2

-

-

-4

V

IC=-5A, IB=-20mA

*VBE(on)

-

-

-2.5

V

IC=-3A, VCE=-3V

*hFE1

1000

-

-

IC=-0.5A, VCE=-3V

*hFE2

1000

-

-

IC=-3A, VCE=-3V

Cob

-

-

300

FP

VCB=-10V, f=0.1MHz, IE=0

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%