HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6761

Issued Date : 1994.10.06

Revised Date : 2002.02.26

Page No. : 1/3

HTIP50

HSMC Product Specification

HTIP50

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP50 is designed for line operated audio output amplifier

switch-mode power supply drivers and other switching applications.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -50 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) ..................................................................................... 40 W

Total Power Dissipation (Ta=25

°C) ....................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... 500 V

BVCEO Collector to Emitter Voltage.................................................................................. 400 V

BVEBO Emitter to Base Voltage............................................................................................ 5 V

IC Collector Current............................................................................................................... 1 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

500

-

-

V

IC=1mA, IE=0

BVCEO

400

-

-

V

IC=30mA, IB=0

BVEBO

5

-

-

V

IE=0.1mA, IC=0

IEBO

-

-

1

mA

VEB=5V, IC=0

ICEO

-

-

1

mA

VCE=300V, IB=0

ICES

-

-

1

mA

VCE=500V, VEB=0

*VCE(sat)

-

-

1

V

IC=1A, IB=0.2A

VBE(on)

-

-

1.5

V

IC=1A, VCE=10V

*hFE1

30

-

150

IC=0.3A, VCE=10V

*hFE2

10

-

-

IC=1A, VCE=10V

fT

10

-

-

MHz

IC=0.2A, VCB=10V, f=2MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-220