HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : Preliminary Data

Issued Date : 2001.03.01

Revised Date : 2001.03.29

Page No. : 1/3

HTL294D

HSMC Product Specification

HTL294D

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTL294D is designed for application that requires high voltage.

Features

• High Breakdown Voltage: 400(Min.) at IC=1mA

• High Current: IC=300mA at 25°C

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................... 1.5 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ..................................................................................... -400 V

VCEO Collector to Emitter Voltage .................................................................................. -400 V

VEBO Emitter to Base Voltage ............................................................................................ -6 V

IC Collector Current ..................................................................................................... -250 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-400

-

-

V

IC=-100uA, IE=0

BVCEO

-400

-

-

V

IC=-1mA, IB=0

BVEBO

-6

-

-

V

IE=-10uA, IC=0

ICBO

-

-

-1

uA

VCB=-400V, IE=0

ICES

-

-

-10

uA

VCE=-400V, IC=0

IEBO

-

-

-0.2

uA

VEB=-6V, VBE=0

*VCE(sat)1

-

-

-300

mV

IC=-10mA, IB=-1mA

*VCE(sat)2

-

-

-500

mV

IC=-50mA, IB=-5mA

*VBE(sat)

-

-

-750

mV

IC=-10mA, IB=-1mA

*hFE1

50

-

-

VCE=-10V, IC=-1mA

*hFE2

60

-

250

VCE=-10V, IC=-20mA

*hFE3

50

-

-

VCE=-10V, IC=-80mA

ft

50

-

-

MHz

VCE=-20V, IE=-10mA, f=1MHz

Cob

-

-

30

pF

VCB=-20V, f=1MHz, IE=0

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%