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M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF

DC and AC parameters

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Table 13. Memory cell data retention

Parameter

Test condition

Min.

Unit

1. The data retention behavior is checked in production, while the data retention limit defined in this table is

extracted from characterization and qualification results.

2. For products identified by process letter K or T (previous products were specified with a data retention of 40

years at 55°C).

Year

Table 14. DC characteristics (M24C32-W, device grade 6)

Symbol

Parameter

Test conditions (in addition to those

in Table 6)

Min.

Max.

Unit

Input leakage current

(SCL, SDA, E2, E1,

E0)

mode

-± 2

µA

Output leakage

current

SDA in Hi-Z, external voltage applied

-± 2

µA

Supply current (Read)

(rise/fall time < 50 ns)

-2

mA

(rise/fall time < 50 ns)

1. Only for devices identified with process letter K or T.

-2.5

mA

Supply current (Write)

2. Characterized value, not tested in production.

mA

Standby supply

current

3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

-2

µA

Device not selected(3),

4. 5 µA for previous devices identified by process letter P.

µA

Input low voltage

(SCL, SDA, WC, E2,

-

–0.45

V

Input high voltage

(SCL, SDA)

6.5

V

Input high voltage

V

Output low voltage

-0.4

V