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M24C32-R 데이터시트(PDF) 24 Page - STMicroelectronics

부품명 M24C32-R
상세설명  32-Kbit serial IC bus EEPROM
PDF  42 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M24C32-R 데이터시트(HTML) 24 Page - STMicroelectronics

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DC and AC parameters
M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF
24/42
DocID4578 Rev 24
Figure 11. AC measurement I/O waveform
Table 10. Input parameters
Symbol
Parameter(1)
1. Characterized only, not tested in production.
Test condition
Min.
Max.
Unit
CIN
Input capacitance (SDA)
-
-
8
pF
CIN
Input capacitance (other pins)
-
-
6
pF
ZL
Input impedance (E2, E1, E0, WC)(2)
2. E2, E1, E0 input impedance when the memory is selected (after a Start condition).
VIN < 0.3 VCC
30
-
k
Ω
ZH
VIN > 0.7 VCC
500
-
k
Ω
Table 11. AC measurement conditions
Symbol
Parameter
Min.
Max.
Unit
Cbus
Load capacitance
100
pF
SCL input rise/fall time, SDA input fall time
-
50
ns
Input levels
0.2 VCC to 0.8 VCC
V
Input and output timing reference levels
0.3 VCC to 0.7 VCC
V
Table 12. Cycling performance
Symbol
Parameter
Test condition
Max.
Unit
Ncycle
Write cycle
endurance(1)
1. The Write cycle endurance is defined by characterization and qualification. For devices embedding the
ECC functionality (see Chapter 5.1.5), the write cycle endurance is defined for group of four bytes located
at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer.
TA ≤ 25 °C, VCC(min) < VCC < VCC(max)
4,000,000(2)
2. Cycling performance for products identified by process letter K or T (previous products were specified with
1 million cycles at 25 °C).
Write cycle(3)
3. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock
Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write
Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling
TA = 85 °C, VCC(min) < VCC < VCC(max)
1,200,000



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