PB5010 datasheet(3/5 Pages) VISHAY

3 / 5 page

PB5006, PB5008, PB5010

www.vishay.com

Vishay General Semiconductor

Revision: 26-Jun-13

Document Number: 84809

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Forward Power Dissipation

Fig. 4 - Typical Forward Characteristics Per Diode

Fig. 5 - Typical Reverse Characteristics Per Diode

Fig. 6 - Typical Junction Capacitance Per Diode

Average Forward Current (A)

100

120

0.4

1.2

0.1

100

0.6

0.8

1.0

Instantaneous Forward Voltage (V)

A = 150 °C

A = 125 °C

A = 25 °C

1.1

0.5

0.7

0.9

A = 100 °C

A = 85 °C

1000

100

0.01

100

Percent of Rated Peak Reverse Voltage (%)

A = 150 °C

A = 125 °C

A = 25 °C

0.1

A = 100 °C

A = 85 °C

0.1

100

1000

Reverse Voltage (V)

100

J = 25 °C

f = 1.0 MHz

sig = 50 mVp-p

PB5010 데이터시트(PDF) 3 Page - Vishay Siliconix

PB5010 데이터시트(HTML) 3 Page - Vishay Siliconix

Html Pages

1 2 3 4 5

데이터시트 다운로드

링크 URL