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Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE

FEATURES

or use in low voltage, high frequency inverters

Free wheeling, and polarity protection applications.

MARKING

B5817WS: SJ

B5818WS:SK

B5819WS: SL

Maximum Ratings and Electrical Characteristics, Single Diode @TA=25

Paramete

r

Symbol

B5817WS

B5818WS

B5819WS

Unit

Non-Repetitive Peak reverse voltage

VRM

20

30

40

V

Peak repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

20

30

40

V

RMS Reverse Voltage

VR(RMS)

14

21

28

V

Average Rectified Output Current

IO

1

A

Peak forward surge current @=8.3ms

IFSM

9

A

Repetitive Peak Forward Current

IFR

M

1.5

A

Power Dissipation

Pd

250

mW

ThermalResistanc

Junction to Ambient

RθJA

500

/W

Storage temperature

TSTG

-65~+150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

V(BR)

IR= 1mA

20

30

40

V

Reverse voltage leakage current

IR

VR=20V

B5817WS

VR=30V

B5818WS

VR=40V

B5819WS

1

mA

Forward voltage

VF

B5817WS

IF=1A

IF=3A

0.45

0.75

V

B5818WS

IF=1A

IF=3A

0.55

0.875

V

B5819WS

IF=1A

IF=3A

0.6

0.9

V

Diode capacitance

C

D

VR=4V, f=1MHz

120

pF

B5817WS

B5818WS

B5819WS

SOD-323

-

+

B5817WS/B5818WS/B5819WS

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/