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IDT7133LA55G 데이터시트(PDF) 8 Page - Integrated Device Technology |
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IDT7133LA55G 데이터시트(HTML) 8 Page - Integrated Device Technology |
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8 / 16 page ![]() 6.42 IDT7133SA/LA, IDT7143SA/LA High-Speed 2K x 16 Dual-Port RAM Military, Industrial and Commercial Temperature Ranges 8 TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(5) TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE(5) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is deasserted first, OE or CE. 3. tBDD delay is required only in a case where the opposite port is completing a write operation to the same address location. For simultaneous read operations, BUSY has no relationship to valid output data. 4. Start of valid data depends on which timing becomes effective last, tAOE, tACE, tAA, or tBDD. 5. R/W = VIH, and the address is valid prior to or coincidental with CE transition LOW. 2746 drw 07 tAA tOH tOH DATAOUT ADDRESS tRC DATA VALID PREVIOUS DATA VALID BUSYOUT tBDD (3,4) 2746 drw 08 tAOE tLZ tHZ DATAOUT CE tACE VALID DATA OE CURRENT ICC ISB tPU 50% tLZ tPD 50% tHZ (1) (4) (1) (4) (2) (2) |
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