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Plastic-Encapsulate Transistors

FEATURES

Excellent HFE Linearity.

High DC current gain

Marking :

28S

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

40

V

DCollector-Emitter Voltage

V

CEO

20

V

Emitter-Base Voltage

V

EBO

6

V

Collector Current -Continuous

I

C

1000

mA

Collector Power Dissipation

200

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=100μA,IE=0

40

V

Collector-emitter breakdown voltage

VCEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

VEBO

IE=100μA,IC=0

6

V

Collector cut-off current

ICBO

VCB=35V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=1V,IC=1mA

VCE=1V,IC=0.1A

VCE=1V,IC=0.3A

VCE=1V,IC=0.5A

290

300

300

300

1000

Collector-emitter saturation voltage

VCE(sat)

IC=600mA, IB=20mA

0.55

V

Transition frequency

fT

VCE=10V, IC=50mA

100

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

9

pF

CLASSIFICATION OF

Rank

B

C

D

Range

300-550

500-700

650-1000

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

M28S

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/