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GMS2302 데이터시트(PDF) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

부품명 GMS2302
상세설명  N-Channel Enhancement-Mode MOSFETs
PDF  3 Pages
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제조업체  GSME [Guilin Strong Micro-Electronics Co., Ltd.]
홈페이지  http://www.gsme.com.cn
Logo GSME - Guilin Strong Micro-Electronics Co., Ltd.

GMS2302 데이터시트(HTML) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

  GMS2302 Datasheet HTML 1Page - Guilin Strong Micro-Electronics Co., Ltd. GMS2302 Datasheet HTML 2Page - Guilin Strong Micro-Electronics Co., Ltd. GMS2302 Datasheet HTML 3Page - Guilin Strong Micro-Electronics Co., Ltd.  
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桂 林 斯 壯 微 電 子 有 限 責 任 公 司
Guilin
Guilin
Guilin
Guilin
Strong
Strong
Strong
Strong
Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
GMS2302
SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)
N
N
N
N
-Channel
-Channel
-Channel
-Channel
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
MOS
MOS
MOS
MOS
FETs
FETs
FETs
FETs
N
N
N
N
沟道增强型 MOS
MOS
MOS
MOS
场效应管
■
MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM
RATINGS
RATINGS
RATINGS
RATINGS
最大額定值
■
DEVICE
DEVICE
DEVICE
DEVICE
MARKING
MARKING
MARKING
MARKING
打標
Characteristic 特性參數
Symbol 符號
Max 最大值
Unit 單位
Drain-Source Voltage
漏極-源極電壓
BVDSS
16
V
Gate- Source Voltage
栅極-源極電壓
VGS
+8
V
Drain Current (continuous)
漏極電流-連續
ID
2.6
A
Drain Current (pulsed)
漏極電流-脉冲
IDM
10
A
Total Device Dissipation
總耗散功率
TA=25℃環境溫度爲 25℃
PD
450
mW
Junction 結溫
TJ
150
℃
Storage Temperature 儲存溫度
T
stg
-55to+150
℃
GM
GM
GM
GM
S2302
S2302
S2302
S2302
=
=
=
=
A2
A2
A2
A2


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