DD28F032SA datasheet(39/49 Pages) INTEL

39 / 49 page

DD28F032SA

6.9 AC Characteristics for CEX#—Controlled Command Write Operations(1)

(Continued)

VCC = 5.0V ± 0.5V, 5.0V ± 0.25V, TA = 0°C to +70°C

Versions

VCC ± 5%

DD28F032SA-070

Unit

VCC ± 10%

DD28F032SA-080

DD28F032SA-100

Sym

Parameter

Notes

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

tPHEL

RP# High

Recovery to

CEX#

Going Low

111

µs

tEHGL

Write

Recovery

before Read

tQVVL

VPP Hold from

Valid Status

(CSR, GSR,

BSR) Data at

RY/BY# High

000

µs

tEHQV1 Duration of

Word/Byte

Program

Operation

4,5

4.5

Note

4.5

Note

4.5

Note

µs

tEHQV2 Duration of

Block Erase

Operation

0.3

sec

NOTES:

For 28F016SA No. 1: CE

X# is defined as the latter of CE0# or CE1# going low or the first of CE0# or CE1# going high.

For 28F016SA No. 2: CE

X# is defined as the latter of CE0# or CE2# going low or the first of CE0# or CE2# going high.

1. Read timings during data program and block erase are the same as for normal read.

2. Refer to command definition tables for valid address and data values.

3. Sampled, but not 100% tested.

4. Data program/block erase durations are measured to valid Status Register data.

5. Word/byte program operations are typically performed with 1 programming pulse.

6. Address and data are latched on the rising edge of CE

X# for all command write operations.

7. This information will be available in a technical paper. Please call Intel’s Applications Hotline or your local sales office for

more information.

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