2

Die Characteristics

DIE DIMENSIONS:

Size: 2390

µm x 2390µm (94 mils x 94 mils)

Thickness: 525

µm ±25µm (20.6 mils ±1 mil)

Bond Pad: 110

µm x 110µm (4.3 mils x 4.3 mils)

METALLIZATION:

Type: Al

Metal 1 Thickness: 0.7

µm ±0.1µm

Metal 2 Thickness: 1.0

µm ±0.1µm

SUBSTRATE

Silicon on Sapphire (SOS)

SUBSTRATE POTENTIAL:

Unbiased Insulator

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Type: Phosphorous Silicon Glass (PSG)

Thickness: 1.30

µm ±0.15µm

SPECIAL INSTRUCTIONS:

ADDITIONAL INFORMATION:

Transistor Count: 140

Metallization Mask Layout

ACS253MS

S1

10E

20E

1Y

GND

2Y

ACS253MS

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