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FSS9130D 데이터시트(PDF) 2 Page - Intersil Corporation

부품명 FSS9130D
상세설명  6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
PDF  8 Pages
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSS9130D 데이터시트(HTML) 2 Page - Intersil Corporation

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3-198
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSS9130D, FSS9130R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
-100
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-100
V
Continuous Drain Current
TC = 25
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
6A
TC = 100
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
4A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
18
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = 25
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
50
W
TC = 100
oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
20
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.40
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . IAS
18
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
6A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
18
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
-100
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
-7.0
V
TC = 25
oC
-2.0
-
-6.0
V
TC = 125
oC
-1.0
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = -80V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = -12V, ID = 6A
-
-
-4.16
V
Drain to Source On Resistance
rDS(ON)12
ID =4A,
VGS = -12V
TC = 25
oC
-
0.370
0.660
Ω
TC = 125
oC
-
-
1.089
Ω
Turn-On Delay Time
td(ON)
VDD = -50V, ID = 6A,
RL = 8.3Ω, VGS = -12V,
RGS = 7.5Ω
-
-
70
ns
Rise Time
tr
-
-
160
ns
Turn-Off Delay Time
td(OFF)
-
-
110
ns
Fall Time
tf
-
-
130
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to -20V
VDD = -50V,
ID = 6A
-
-
62
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to -12V
-
32
40
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to -2V
-
-
2.6
nC
Gate Charge Source
Qgs
-
6.3
8.8
nC
Gate Charge Drain
Qgd
-13
18
nC
Plateau Voltage
V(PLATEAU) ID = 6A, VDS = -15V
-
-7
-
V
Input Capacitance
CISS
VDS = -25V, VGS = 0V,
f = 1MHz
-
840
-
pF
Output Capacitance
COSS
-
300
-
pF
Reverse Transfer Capacitance
CRSS
-75-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
2.5
oC/W
Thermal Resistance Junction to Ambient
R
θJA
--
60
oC/W
FSS9130D, FSS9130R



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