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Die Characteristics

DIE DIMENSIONS:

(2159

µm x 2565µm x 533µm ±51µm)

85 x 101 x 21mils

±2mil

METALLIZATION:

Type: Al Si

Thickness: 11.0k

Å

SUBSTRATE POTENTIAL:

Unbiased Silicon on Sapphire

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 13.0k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

264

PROCESS:

CMOS SOS

Metallization Mask Layout

HCS138T

A1

A0

A2 (3)

E1 (4)

E2 (5)

E3 (6)

(8)

(9)

(10)

(11) Y4

(12) Y3

(13) Y2

(14) Y1

(2)

(1)

(16)

GND

Y6

Y5

(7)

Y0

(15)

NC

NC

Y7

NC

NC

NOTE:

The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The

mask series for the HCS138 is TA14361A.

HCS138T