Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

Complimentary to SS8050

Marking :

Y2

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-40

V

Collector-Emitter Voltage

V

CEO

-25

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-1500

mA

Collector Power Dissipation

300

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Umiot

Collector-base breakdown voltage

VCBO

IC=-100μA, IE=0

-40

V

Collector-emitter breakdown voltage

VCEO

IC=-0.1mA, IB=0

-25

V

Emitter-base breakdown voltage

VEBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40V, IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-20V, IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

μA

DC current gain

hFE(1)

VCE=-1V, IC=-100mA

120

400

hFE(2)

VCE=-1V, IC=-800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=-800mA, IB=-80mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-800mA, IB=-80mA

-1.2

V

Base-emitter on voltage

VBE(on)

IC=-1V,VCE=-10mA

-1

V

Base-emitter positive favor voltage

VBEF

IB=-1A

-1.55

V

Transition frequency

fT

VCE= -10V,

IC= -50mA

f=30MHz

100

MHz

output capacitance

Cob

(VCB=-10V,IE=0,f=1MHz)

20

pF

CLASSIFICATION OF

Rank

L

H

J

Range

120-200

200-350

300-400

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

SS8550

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/