3

Input Capacitance

(Figure 11)

-

600

-

pF

Output Capacitance

-

250

-

pF

Reverse Transfer Capacitance

-80-

pF

Internal Drain Inductance

Measured Between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins

and the Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

5.0

-

nH

Internal Source Inductance

Measured From The

Source Lead, 6mm

(0.25in) From the Flange

and the Source Bonding

Pad

-

12.5

-

nH

Thermal Resistance Junction to Case

-

-

1.6

Thermal Resistance Junction to Ambient

Free Air Operation

-

-

30

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET Sym-

bol Showing the Integral

Reverse P-N Junction

Diode

-

-

9.0

A

Pulse Source to Drain Current

(Note 3)

-

-

36

A

Source to Drain Diode Voltage (Note 2)

-

-

2.0

V

Reverse Recovery Time

-

450

-

ns

Reverse Recovered Charge

-

3.0

-

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

D

S

G

G

D

S

IRF230, IRF231, IRF232, IRF233