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IRF430 데이터시트(PDF) 4 Page - Intersil Corporation

부품명 IRF430
상세설명  4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
PDF  7 Pages
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF430 데이터시트(HTML) 4 Page - Intersil Corporation

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4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE
ON RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified (Continued)
100
10
1
1000
1
10
100
0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
TC = 25
oC
TJ = MAX RATED
SINGLE PULSE
10
µs
100
µs
1ms
10ms
DC
100ms
OPERATION IN THIS
AREA IS LIMITED
BY rDS(ON)
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
0
300
6
4
3
0
2
1
200
VGS = 4.5V
5
80
µs PULSE TEST
VGS = 4V
VGS = 5V
VGS = 5.5V
VGS = 10V
5
4
3
0
2
24
6
8
010
VDS, DRAIN TO SOURCE VOLTAGE (V)
1
80
µs PULSE TEST
VGS = 4.5V
VGS = 5V
VGS = 5.5V
VGS = 10V
VGS = 4V
5
0
1234
05
VGS, GATE TO SOURCE VOLTAGE (V)
1
2
VDS > ID(ON) x rDS(ON) MAX
80
µs PULSE TEST
DUTY CYCLE
≤ 2%
125oC
25oC
67
3
4
-55oC
ID, DRAIN CURRENT (A)
10
20
025
4
3
1
2
VGS = 20V
VGS = 10V
515
2.2
1.4
0.6
060
-60
TJ, JUNCTION TEMPERATURE (
oC)
ID = 1.5A
1.8
1.0
0.2
-40
-20
20
40
80
100
140
120
VGS = 10V
IRF430



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