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IRLML6401 데이터시트(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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IRLML6401 데이터시트(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 6 page ![]() 2 i ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -12 V VDS=-12V, VGS=0V -1 VDS=-9.6V, VGS=0V, TJ= 55℃ -25 Gate-Body leakage current IGSS VDS=0V, VGS=±8V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.4 -0.55 -0.95 V VGS=-4.5V, ID=-4.3A 50 VGS=-2.5V, ID=-2.5A 85 VGS=-1.8V, ID=-2A 125 Forward Transconductance gFS VDS=-10V, ID=-4.3A 8.6 S Input Capacitance Ciss 830 Output Capacitance Coss 180 Reverse Transfer Capacitance Crss 125 Total Gate Charge Qg 10 15 Gate Source Charge Qgs 1.4 2.1 Gate Drain Charge Qgd 2.6 3.9 Turn-On DelayTime td(on) 11 Turn-On Rise Time tr 32 Turn-Off DelayTime td(off) 250 Turn-Off Fall Time tf 210 Body Diode Reverse Recovery Time trr IF=-1.3A, dI/dt=-100A/μs 22 33 Body Diode Reverse Recovery Charge Qrr IF=-1.3A, dI/dt=-100A/μs 8 12 Nc Maximum Body-Diode Continuous Current IS 1.3 A Diode Forward Voltage VSD IS=-1.3A,VGS=0V -1.2 V VGS=0V, VDS=-10V, f=1MHz VGS=-5.0V, VDS=-10V, ID=-4.3A pF nC ns Zero Gate Voltage Drain Current IDSS μ A mΩ ID=-1.0A, VDS=-6.0V, RL=6Ω,RGEN=89Ω RDS(On) Static Drain-Source On-Resistance ■ Marking Marking 1F * IRLML6401 (KRLML6401) |
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