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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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KI005PDFN 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KI005PDFN 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type www.kexin.com.cn 1 MOSFET P-Channel MOSFET KI005PDFN ■ Features ● VDS (V) =-12V ● ID =-4.1 A (VGS =-4.5V) ● RDS(ON) ＜ 45mΩ (VGS =-4.5V) ● RDS(ON) ＜ 60mΩ (VGS =-2.5V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ± 12 Continuous Drain Current ID -4.1 A Power Dissipation PD 1.4 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ DFN2X2-06L Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -12 V Zero Gate Voltage Drain Current IDSS VDS=-12V, VGS=0V -1 uA Gate-Body leakage current IGSS VDS=0V, VGS=±12V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -0.45 -1 V VGS=-4.5V, ID=-4.1A 45 VGS=-2.5V, ID=-3A 60 Diode Forward Voltage VSD IS=-1A,VGS=0V -1.2 V mΩ RDS(On) Static Drain-Source On-Resistance ■ Marking Marking 05P |
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유사한 설명 - KI005PDFN |
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