4-269

File Number

2314.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRFD110

1A, 100V, 0.600 Ohm, N-Channel Power

MOSFET

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17441.

Features

• 1A, 100V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

HEXDIP

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD110

HEXDIP

IRFD110

NOTE: When ordering, use the entire part number.

G

D

S

SOURCE

GATE

DRAIN

Data Sheet

July 1999