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2N7000 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 2N7000
상세설명  N-Channel Enhancement Mode Power Mos.FET
PDF  3 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2N7000 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  2N7000_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH 2N7000_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH 2N7000_15 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Switching Characteristics
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
0.45
25
5
V
pF
VGS=0V
VDS=25V
f=1.0MHz
_
_
_
_
_
_
_
_
75
5
6
mA
Ω
VGS=10V, ID=500mA
VDS=10V ,VGS=4.5V
_
_
_
_
_
_
2.5
60
Drain-Source On-Voltage
Crss
Ciss
Coss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I
Static Drain-Source On-Resistance
On-State Drain Current
RDS(ON)
60
0.8
3.0
10
1
±
V
V
nA
uA
100
VGS=0V, ID=250uA
VGS= 15V,VDS=0
±
VDS=48V,VGS=0
VDS=VGS, ID=1.0mA
_
_
_
_
_
_
_
mS
VDS=10V,ID=200mA
_
_
BVDSS
DSS
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Current
Zero Gate Voltage Drain Current
VGS(th)
IGSS
Forward Transconductance
Gfs
VGS=4.5V,ID=75mA
ID(ON)
VDS(ON)
Notes: 1.
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Turn-on Delay Time
Turn-off Delay Time
TOFF
_
nS
TON
VDD=15V,ID=500mA
RG=25
RL=30
VGEN=10V
10
_
Pulse width 300us, dutycycle 2%.
≦
_
_
VGS=10V, ID=500mA
VGS=4.5V,ID=75mA
≦
1
10
_
_
Ω
Ω
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 3
Elektronische Bauelemente
2N7000
200mA,60V,RDS(ON) 6
N-Channel Enhancement Mode Power Mos.FET
Ω



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