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MBR640CS 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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MBR640CS 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page ![]() SMD Type www.kexin.com.cn 1 Diodes Schottky Diodes MBR640CS~MBR6200CS ■ Features ● Low power loss, high efficiency. ● Low forwrd voltage, high current capability ● High surge capacity. ● For use in low voltage,high frequency inverters. 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ * 1 Measured at 1 MHz and applied reverse voltage of 4 V D.C * 2 Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted Parameter Symbol MBR 640CS MBR 645CS MBR 650CS MBR 660CS MBR 680CS MBR 690CS MBR 6100CS MBR 6150CS MBR 6200CS Unit Repetitive Peak Reverse Voltage VRRM 40 45 50 60 80 90 100 150 200 Surge Peak Reverse Voltage VRSM 28 31.5 35 42 56 63 70 105 140 Maximum DC Blocking Voltage VDC 40 45 50 60 80 90 100 150 200 Forward Voltage @ IF=3A VF Averaged Forward Current IFAV Peak Forward Surge Current TA=25℃ IFSM Maximum DC Reverse Current Ta=25℃ Ta=100℃ Typical Thermal Resistance RthC ℃ /W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 V 6 75 0.75 0.8 0.9 IR 0.7 -65 to 175 ℃ A 0.05 20 3 mA 175 |
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