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MBR20100F 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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MBR20100F 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page ![]() DIP Type www.kexin.com.cn 1 Diodes Schottky Barrier Diodes MBR20100F ■ Features ● LOW VF. ● High Operating Junction Temperature. ● High Switching Speed. ● High Reliability. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit DC Blocking Voltage @ Ir=0.2mA VRRM 100 V DC Forward Current IF(AV) 10 Peak forward surge current IFSM 150 Junction Temperature TJ 175 Storage temperature range Tstg -55 to 150 ℃ A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VRM IR= 0.2 m A 100 V Forward voltage VF IF= 10 A ,Tc=25℃ 850 mV Reverse voltage leakage current IR VR= 100V,Tc=25℃ 10 uA (Note.1) (Note.1) Note.1: Pulse Test: Pulse Width = 300 us, Duty Cycle ≤ 2.0%. 1 3 2, 4 0.70 ±0.20 ±0.20 2.54typ 0.80 ±0.20 1.47max 2.54 ±0.20 ±0.20 0.50 ±0.20 2.76 ±0.20 2.54typ φ3. 18 ±0.20 Unit: mm TO-220F |
유사한 부품 번호 - MBR20100F |
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유사한 설명 - MBR20100F |
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