| 전자부품 데이터시트 검색엔진 |
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ISL81485 데이터시트(PDF) 9 Page - Intersil Corporation |
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ISL81485 데이터시트(HTML) 9 Page - Intersil Corporation |
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9 / 11 page ![]() 9 Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): GND TRANSISTOR COUNT: 528 PROCESS: Si Gate BiCMOS FIGURE 15. SUPPLY CURRENT vs TEMPERATURE Typical Performance Curves VCC = 5V, TA = 25oC; Unless Otherwise Specified (Continued) -40 0 50 85 TEMPERATURE (oC) -25 25 75 700 750 800 850 900 950 DE = VCC, RE = X DE = GND, RE = X ISL81485 |
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