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BAS16V 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BAS16V 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() BAS16V 0.3A , 100V Plastic-Encapsulated Transistors Elektronische Bauelemente 21-Jul-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Reverse Breakdown Voltage V(BR)R 75 - - V IR=100µA Forward Voltage VF1 - - 0.715 V IF=1mA VF2 - - 0.855 IF=10mA VF3 - - 1 IF=50mA VF4 - - 1.25 IF=150mA Reverse Voltage Leakage Current IR1 - - 1 µA VR=75V IR2 - - 0.025 VR=20V Diode Capacitance CD - - 2.0 pF VR=0 , f=1MHz Reverse Recovery Time TRR - - 4.0 nS IF=IR=10mA, IRR=0.1 x IR, RL=100 RATINGS AND CHARACTERISTIC CURVES |
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