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RFD16N02LSM 데이터시트(PDF) 4 Page - Intersil Corporation

부품명 RFD16N02LSM
상세설명  16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET
PDF  8 Pages
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFD16N02LSM 데이터시트(HTML) 4 Page - Intersil Corporation

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4
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves (Continued)
0.01
0.1
10
10
0.001
200
1
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 25
oC
STARTING TJ = 150
oC
100
1
100
0
25
0
1
23
5
50
75
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 4V
VGS = 10V
100
4
VGS = 3V
VGS = 5V
VGS = 4.5V
VGS = 3.5V
PULSE DURATION = 250
µs, TC = 25oC
0
3.0
4.5
6.0
7.5
1.5
0
25
50
75
175oC
PULSE TEST
PULSE DURATION = 250
µs
DUTY CYCLE = 0.5% MAX
VGS, GATE TO SOURCE VOLTAGE (V)
-55oC
100
25oC
VDD = 15V
0
25
50
75
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
100
ID = 16A
ID = 8A
ID = 32A
ID = 2A
4.5
5.0
TJ = 25
oC, PULSE DURATION = 250µs
0
50
100
150
200
010
20
30
40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
250
tr
tf
td(ON)
td(OFF)
VDD = 15V, ID = 16A, RL = 0.93Ω
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
200
ID = 16A
VGS = 5V,
PULSE DURATION = 250
µs,
RFD16N02L, RFD16N02LSM



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