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RFD4N06LSM 데이터시트(PDF) 3 Page - Intersil Corporation

부품명 RFD4N06LSM
상세설명  4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
PDF  5 Pages
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFD4N06LSM 데이터시트(HTML) 3 Page - Intersil Corporation

  RFD4N06LSM Datasheet HTML 1Page - Intersil Corporation RFD4N06LSM Datasheet HTML 2Page - Intersil Corporation RFD4N06LSM Datasheet HTML 3Page - Intersil Corporation RFD4N06LSM Datasheet HTML 4Page - Intersil Corporation RFD4N06LSM Datasheet HTML 5Page - Intersil Corporation  
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6-191
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
TC, CASE TEMPERATURE (
oC)
0
25
50
75
100
125
150
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (
oC)
5
3
2
1
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
1
100
1.0
TJ = MAX RATED
TC = 25
oC
OPERATION IN THIS AREA
LIMITED BY rDS(ON)
12
10
8
6
4
2
0
0123
45
6
7
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µs
TC = 25
oC
VGS = 7.5V
VGS = 10V
VGS = 5V
4.5V
4V
3.5V
3V
2.5V
2V
VGS, GATE TO SOURCE VOLTAGE (V)
TC = -40
oC
TC = -40
oC
TC = 125
oC
5
4
3
2
1
0
12
3
4
5
6
8
7
6
VDS = 10V
PULSE DURATION = 80
µs
DUTY CYCLE
≤ 2%
TC = 25
oC
TC = 125
oC
ID, DRAIN CURRENT (A)
TC = 25
oC
TC = -40
oC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
02468
10
VGS = 5V
PULSE DURATION = 80
µs
TC = 125
oC
RFD4N06L, RFD4N06LSM



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