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RFD8P06LESM 데이터시트(PDF) 5 Page - Intersil Corporation

부품명 RFD8P06LESM
상세설명  8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
PDF  8 Pages
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제조업체  INTERSIL [Intersil Corporation]
홈페이지  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFD8P06LESM 데이터시트(HTML) 5 Page - Intersil Corporation

  RFD8P06LESM Datasheet HTML 1Page - Intersil Corporation RFD8P06LESM Datasheet HTML 2Page - Intersil Corporation RFD8P06LESM Datasheet HTML 3Page - Intersil Corporation RFD8P06LESM Datasheet HTML 4Page - Intersil Corporation RFD8P06LESM Datasheet HTML 5Page - Intersil Corporation RFD8P06LESM Datasheet HTML 6Page - Intersil Corporation RFD8P06LESM Datasheet HTML 7Page - Intersil Corporation RFD8P06LESM Datasheet HTML 8Page - Intersil Corporation  
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7-15
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves Unless Otherwise Specified
-80
-40
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
TJ, JUNCTION TEMPERATURE (
oC)
200
VGS = VDS,ID = -250µA
100
20
30
40
50
0
25
75
125
50
0
10
RGS, GATE TO SOURCE RESISTANCE (Ω)
VDD = -30V, ID = -8A, RL= 3.75Ω
td(ON)
tf
td(OFF)
tr
VDD =BVDSS
-60
-45
-30
-15
0
-5.00
-3.75
-2.50
-1.25
0.00
20
IG(REF)
IG(ACT)
80
IG(REF)
IG(ACT)
t, TIME (
µs)
VDD = BVDSS
RL = 7.5Ω
IG(REF) = -0.20mA
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VGS = -5V
800
600
400
200
0
0
-10
-20
-30
-40
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
1000
CISS
COSS
CRSS
-60
VGS = 0V, f = 0.1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.01
Ω
L
IAS
+
-
VDS
VDD
RG
VARY tP TO OBTAIN
REQUIRED PEAK IAS
DUT
tP
-VGS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
RFD8P06LE, RFD8P06LESM, RFP8P06LE



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