BCPA14_15 datasheet(1/2 Pages) SECOS

부품명	BCPA14

상세설명	NPN Silicon

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

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BCPA14

NPN Silicon

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

SOT-89

ELECTRICAL CHARACTERISTICS (Tamb=25 C)

o

P

Symbol

Min. Typ. Max. Unit

arameter

Collector-Base Breakdown Voltage

IC=100uA, IE=0

IC= 100uA, IB=0

IE=10uA, IC=0

VCB=30V, IE=0

VCB=10V,f=1MHz,IE=0

IC=100mA, IB=0.1mA

VCE=5V, IC=10mA

VCE=5V, IC=100mA

VCE=5V, IC =10mA, f=100MHz

BVCBO

30

V

Collector-Emitter Breakdown Voltage

BVCEO

BVEBO

V

10

20K

nA

Emitter-Base Breakdown Voltage

10K

pF

ICBO

Cob

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

fT

-

6

-

125

-

2.0

1.5

100

MHz

V

Collector Cut-off Current

Collector Output Capacitance

Collector-Emitter Saturation Voltage

Base-Emitter Voltage, On

DC Current Gain

Transition Frequency

*Pulse Test: Pulse Width 380us, Duty Cycle 2%

30

Test Conditions

VCE=5V, IC=100mA

≦

Collector Cut-off Current

ICEO

-

nA

VEB=10V, IC=0

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Description

The BCPA14 is a Darlington amplifier transistor designed

for applications requiring exremely high current gain.

Absolute Maximum Ratings at TA=25 C

Collector to Base Voltage

Emitter to Base Voltage

Collect Current

Total Power Dissipation

Operating Junction and Storage Temperature Range

mA

V

IC

C

W

VCBO

VCEO

PD

Tj, Tstg

30

10

500

1.0

-55~+150

Parameter

Symbol

Ratings

Unit

o

Collector to Emitter Voltage

VEBO

01-Jun-2002 Rev. A

Page 1 of 2

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