2SC5008 datasheet(2/9 Pages) CEL

부품명	2SC5008

상세설명	NPN SILICON EPITAXIAL TRANSISTOR

PDF	9 Pages

Scroll/Zoom	100%

제조업체	CEL [California Eastern Labs]

홈페이지	http://www.cel.com

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2 / 9 page

NE68019 / 2SC5008

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

1.0

VCB = 10 V, IE = 0

Emitter Cutoff Current

IEBO

1.0

VEB = 1 V, IC = 0

160

VCE = 3 V, IC = 5 mA*1

Gain Bandwidth Product

5.5

8.0

GHz

VCE = 3 V, IC = 5 mA

Feed-back Capacitance

Cre

0.3

0.7

VCB = 3 V, IE = 0, f = 1 MHz*2

Insertion Power Gain

|S21e|2

5.5

7.5

VCE = 3 V, IC = 5 mA, f = 2 GHz

= 3 V, IC = 5 mA, f = 2 GHz

*1 Pulse Measurement PW ≤ 350 μs, Duty Cycle ≤ 2 %

*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance

bridge.

hFE Classification

RANK

Marking

hFE

80 to 160

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