2SC5013 datasheet(2/6 Pages) CEL

부품명	2SC5013

상세설명	NPN EPITAXIAL SILICON RF TRANSISTOR

PDF	6 Pages

Scroll/Zoom	100%

제조업체	CEL [California Eastern Labs]

홈페이지	http://www.cel.com

Logo

2 / 6 page

Data Sheet PU10518EJ01V0DS

NE68018 / 2SC5013

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0 mA

−

1.0

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0 mA

−

1.0

DC Current Gain

hFENote1 VCE = 6 V, IC = 10 mA

100

250

−

RF Characteristics

Gain Bandwidth Product

VCE = 6 V, IC = 10 mA

−

–

GHz

Insertion Power Gain

⏐

S21e⏐2 VCE = 6 V, IC = 10 mA, f = 2.0 GHz

7.5

9.5

−

Noise Figure

VCE = 6 V, IC = 5 mA, f = 2.0 GHz

−

1.8

3.0

Reverse Transfer Capacitance

CreNote2 VCB = 10 V, IE = 0 mA, f = 1.0 MHz

−

0.25

0.8

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

R46

R47

R48

hFE Value

50 to 100

80 to 160

125 to 250

2SC5013 데이터시트(PDF) 2 Page - California Eastern Labs

2SC5013 데이터시트(HTML) 2 Page - California Eastern Labs

Html Pages

1 2 3 4 5 6

데이터시트 다운로드

링크 URL