IRF520VL datasheet(1/10 Pages) IRF

부품명	IRF520VL

상세설명	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

PDF	10 Pages

Scroll/Zoom	100%

제조업체	IRF [International Rectifier]

홈페이지	http://www.irf.com

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1 / 10 page

IRF520VS

IRF520VL

HEXFET® Power MOSFET

01/18/02

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

3.4

RθJA

Junction-to-Ambient (PCB Mounted, steady state)**

–––

40

Thermal Resistance

www.irf.com

1

VDSS = 100V

RDS(on) = 0.165Ω

ID = 9.6A

S

D

G

Advanced HEXFET® Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area.

This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating

die sizes up to HEX-4. It provides the highest power capability and the

lowest possible on-resistance in any existing surface mount package. The

D2Pak is suitable for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF520VL) is available for low-profile applications.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Optimized for SMPS Applications

Description

PD - 94306

Absolute Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

9.6

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

6.8

A

IDM

Pulsed Drain Current

37

PD @TC = 25°C

Power Dissipation

44

W

Linear Derating Factor

0.29

W/°C

VGS

Gate-to-Source Voltage

± 20

V

IAR

Avalanche Current

9.2

A

EAR

Repetitive Avalanche Energy

4.4

mJ

dv/dt

Peak Diode Recovery dv/dt

7.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

D2Pak

IRF520VS

TO-262

IRF520VL

°C/W

유사한 부품 번호 - IRF520VL

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRF520VLPBF	225Kb / 11P	HEXFET Power MOSFET

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유사한 설명 - IRF520VL

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International Rectifier	IRC540	222Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A)
	IRF1310N	96Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
	IRF3710S	184Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
	IRF520V	200Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
	IRF5210	125Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
	IRF540N	99Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)
	IRF9510S	176Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
	IRF9520N	95Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
	IRF9530NS	173Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
	IRFRU5410	215Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)

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IRF520VL 데이터시트(PDF) 1 Page - International Rectifier

IRF520VL 데이터시트(HTML) 1 Page - International Rectifier

유사한 부품 번호 - IRF520VL

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