PRF949_15 datasheet(2/16 Pages) JMNIC

2 / 16 page

2000 Apr 03

Philips Semiconductors

Product speciﬁcation

UHF wideband transistor

PRF949

FEATURES

• Small size

• Low noise

• Low distortion

• High gain

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Communication and instrumentation systems.

DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT416

(SC-75) package. The transistor is primarily intended for

wideband applications in the GHz range in the RF front

end of analog and digital cellular telephones, cordless

phones, radar detectors, pagers and satellite TV-tuners.

PINNING SOT416 (SC-75)

DESCRIPTION

base

emitter

collector

handbook, halfpage

MBK090

Top view

Fig.1 Simplified outline (SOT416).

Marking code: V0.

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Cre

feedback capacitance

IC = 0; VCB =6V; f=1MHz

−

0.3

−

transition frequency

IC = 15 mA; VCE =6V; fm = 1 GHz

−

GHz

GUM

maximum unilateral power gain

IC = 15 mA; VCE =6V;

Tamb =25 °C; f = 1 GHz

−

noise ﬁgure

ΓS = Γopt; IC = 5 mA; VCE =6V;

f = 1 GHz

−

1.5

2.5

Ptot

total power dissipation

Ts =75 °C; note 1

−−

150

Rth j-s

thermal resistance from junction

to soldering point

−−

500

K/W

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