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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7467 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7467 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7467 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 28 ––– ––– S VDS = 16V, ID = 9.0A Qg Total Gate Charge ––– 21 32 ID = 9.0A Qgs Gate-to-Source Charge ––– 6.7 10 nC VDS = 15V Qgd Gate-to-Drain ("Miller") Charge ––– 5.8 8.7 VGS = 4.5V Qoss Output Gate Charge ––– 21 29 VGS = 0V, VDS = 15V td(on) Turn-On Delay Time ––– 7.8 ––– VDD = 15V, tr Rise Time ––– 2.5 ––– ID = 9.0A td(off) Turn-Off Delay Time ––– 19 ––– RG = 1.8Ω tf Fall Time ––– 4.0 ––– VGS = 4.5V Ciss Input Capacitance ––– 2530 ––– VGS = 0V Coss Output Capacitance ––– 706 ––– VDS = 15V Crss Reverse Transfer Capacitance ––– 46 ––– pF ƒ = 1.0MHz Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.79 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V ––– 0.65 ––– TJ = 125°C, IS = 9.0A, VGS = 0V trr Reverse Recovery Time ––– 40 60 ns TJ = 25°C, IF = 9.0A, VR= 15V Qrr Reverse Recovery Charge ––– 56 84 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 43 65 ns TJ = 125°C, IF = 9.0A, VR=15V Qrr Reverse Recovery Charge ––– 64 96 nC di/dt = 100A/µs Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 223 mJ IAR Avalanche Current ––– 11 A Avalanche Characteristics Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA ––– 9.4 12 VGS = 10V, ID = 11A ––– 10.6 13.5 m Ω VGS = 4.5V, ID = 9.0A ––– 17 35 VGS = 2.8V, ID = 5.5A VGS(th) Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V S D G Diode Characteristics 2.3 90 A VSD Diode Forward Voltage Dynamic @ TJ = 25°C (unless otherwise specified) ns |
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