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IRFD224 데이터시트(PDF) 1 Page - International Rectifier |
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IRFD224 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 8 page ![]() Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10 V 0.63 ID @ TC = 100°C Continuous Drain Current, VGS @ 10 V 0.40 A IDM Pulsed Drain Current 5.0 PD @TC = 25°C Power Dissipation 1.0 W Linear Derating Factor 0.0083 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 60 mJ IAR Avalanche Current 0.63 A EAR Repetitive Avalanche Energy 0.10 mJ dv/dt Peak Diode Recovery dv/dt 4.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) IRFD224 HEXFET® Power MOSFET PD -9.1272 Revision 0 VDSS = 250V RDS(on) = 1.1Ω ID = 0.63A Absolute Maximum Ratings Thermal Resistance Parameter Min. Typ. Max. Units RθJA Junction-to-Ambient — — 120 °C/W Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt. Description A HD-1 Next Data Sheet Index Previous Datasheet To Order |
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