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SMS3401A 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SMS3401A
상세설명  P-Channel Enhancement Mode Power MOSFET
PDF  3 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMS3401A 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SMS3401A Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SMS3401A Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SMS3401A Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
SMS3401A
-4.2A , -30V , RDS(ON) 60 mΩ
Ω
Ω
Ω
P-Channel Enhancement Mode Power MOSFET
27-Jun-2014 Rev.A
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
-30
-
-
V
VGS=0, ID= -250µA
Gate-Threshold Voltage
VGS(th)
-0.7
-
-1.3
V
VDS=VGS, ID= -250µA
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±12V, VDS=0
Drain-Source Leakage Current
IDSS
-
-
-1
µA
VDS= -24V, VGS=0
Forward Tranconductance
1
gfs
7
-
-
S
VDS= -5V, ID= -5A
-
-
60
VGS= -10V, ID=-4.2A
-
-
70
VGS= -4.5V, ID= -4A
Static Drain-Source On-Resistance
1
RDS(ON)
-
-
85
m
VGS= -2.5V, ID= -1A
Dynamic Parameters
2
Input Capacitance
Ciss
-
1050
-
Output Capacitance
Coss
-
127
-
Reverse Transfer Capacitance
Crss
-
85
-
pF
VGS =0
VDS= -15V
f =1.0MHz
Turn-on Delay Time
Td(on)
-
6.5
-
Rise Time
Tr
-
3.5
-
Turn-off Delay Time
Td(off)
-
40
-
Fall Time
Tf
-
13
-
nS
VGS= -10V
VDS= -15V
RGEN=6
RL=3.6
Source-Drain Diode
Forward Voltage
1
VSD
-
-
-1
V
VGS =0, IS= -1A
Note:
1.
Pulse Test : Pulse width≦300µs, duty cycle≦2%.
2.
These parameters have no way to verify.



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