IRG4PC40 datasheet(1/8 Pages) IRF

부품명	IRG4PC40

상세설명	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

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제조업체	IRF [International Rectifier]

홈페이지	http://www.irf.com

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Parameter

Max.

Units

VCES

Collector-to-Emitter Breakdown Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

40

IC @ TC = 100°C

Continuous Collector Current

20

A

ICM

Pulsed Collector Current

Q

160

ILM

Clamped Inductive Load Current

R

160

VGE

Gate-to-Emitter Voltage

± 20

V

EARV

Reverse Voltage Avalanche Energy

S

160

mJ

PD @ TC = 25°C

Maximum Power Dissipation

160

PD @ TC = 100°C

Maximum Power Dissipation

65

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm) from case )

°C

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

IRG4PC40W

INSULATED GATE BIPOLAR TRANSISTOR

PD -91656C

E

C

G

n-channel

TO-247AC

Features

• Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

• Industry-benchmark switching losses improve

efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

• Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

• Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

Benefits

VCES = 600V

VCE(on) typ.

= 2.05V

@VGE = 15V, IC = 20A

4/15/2000

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.77

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient, typical socket mount

–––

40

Wt

Weight

6 (0.21)

–––

g (oz)

Thermal Resistance

Absolute Maximum Ratings

W

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유사한 부품 번호 - IRG4PC40

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRG4PC40	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
	IRG4PC40	214Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
	IRG4PC40	143Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
	IRG4PC40F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
	IRG4PC40F	98Kb / 35P	Fit Rate / Equivalent Device Hours

More results

유사한 설명 - IRG4PC40

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC30K	137Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	IRG4BC30U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4BC40W	129Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
	IRG4PC30F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
	IRG4PSC71U	151Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
	IRG4BC30KS	263Kb / 9P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

More results

IRG4PC40 데이터시트(PDF) 1 Page - International Rectifier

IRG4PC40 데이터시트(HTML) 1 Page - International Rectifier

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