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IRG4PH50S 데이터시트(PDF) 5 Page - International Rectifier

부품명 IRG4PH50S
상세설명  INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
PDF  8 Pages
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRG4PH50S 데이터시트(HTML) 5 Page - International Rectifier

  IRG4PH50S Datasheet HTML 1Page - International Rectifier IRG4PH50S Datasheet HTML 2Page - International Rectifier IRG4PH50S Datasheet HTML 3Page - International Rectifier IRG4PH50S Datasheet HTML 4Page - International Rectifier IRG4PH50S Datasheet HTML 5Page - International Rectifier IRG4PH50S Datasheet HTML 6Page - International Rectifier IRG4PH50S Datasheet HTML 7Page - International Rectifier IRG4PH50S Datasheet HTML 8Page - International Rectifier  
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IRG4PH50S
www.irf.com
5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
15
1
10
100
0
1000
2000
3000
4000
5000
6000
7000
V
, Collector-to-Emitter Voltage (V)
CE

V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc

Cies

Coes

Cres
0
25
50
75
100
125
150
175
0
5
10
15
20
Q , Total Gate Charge (nC)
G

V
= 400V
I
= 33A
CC
C
0
10
20
30
40
50
21.0
22.0
23.0
24.0
25.0
R
, Gate Resistance (Ohm)
G

V
= 960V
V
= 15V
T
= 25
C
I
= 33A
CC
GE
J
C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
10
100
1000
T , Junction Temperature ( C )
J
°

R
= 5Ohm
V
= 15V
V
= 960V
G
GE
CC

I =
A
66
C

I =
A
33
C

I =
A
16.5
C
5
RG , Gate Resistance
( Ω )



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