Elektronische Bauelemente

SSG4953

Dual-P Enhancement Mode Power MOSFET

21-Jul-2014 Rev. F

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Static

Drain-Source Breakdown Voltage

-30

-

-

V

Gate-Threshold Voltage

-1

-

-2.5

V

Forward Transfer Conductance

-

6

-

S

Gate-Body Leakage

-

-

±100

nA

Drain-Source Leakage Current

-

-

-1

μA

-

-

45

Drain-Source On-Resistance

2

-

-

82

mΩ

Total Gate Charge

-

6.4

-

Gate-Source Charge

-

2.7

-

Gate-Drain (“Miller”) Charge

-

3.1

-

nC

Turn-On Delay Time

2

-

9

-

Rise Time

-

16.6

-

Turn-Off Delay Time

-

21

-

Fall Time

-

21.6

-

nS

Input Capacitance

-

645

-

Output Capacitance

-

272

-

Reverse Transfer Capacitance

-

105

-

pF

f=1.0MHz

Avalanche Characteristics

Single Pulse Avalanche Energy

5

EAS

30

-

-

mJ

Source-Drain Diode

Forward On Voltage

2

-

-0.84

-1.2

V

Continuous Source Current

1.6

-

-

-6

nS

Pulsed Source Current

2.6

-

-

-12

nC

Force Current

Notes:

1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 135℃/W when mounted on Min. copper pad.

2. The data tested by pulsed , pulse width≦300us , duty cycle≦2%

4. The power dissipation is limited by 150℃ junction temperature

5. The Min. value is 100% EAS tested guarantee.