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AN4402 데이터시트(PDF) 34 Page - STMicroelectronics |
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AN4402 데이터시트(HTML) 34 Page - STMicroelectronics |
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34 / 39 page ![]() Glossary AN4402 34/39 DocID025557 Rev 1 Appendix B Glossary Table 15. Glossary Abbreviation Description VBAT Battery voltage VDS MOSFET drain-source voltage VS MOSFET source voltage VZENER_LS Zener voltage of the gate-drain clamp VZENER_HS Zener voltage of the gate-source clamp VCL_LS Clamping voltage when the gate-drain clamp is active VCL_HS Clamping voltage when the gate-source clamp is active Sign convention : VCL_HS > 0 VF Typical diode forward voltage VGS_TH MOSFET gate-source threshold voltage L Inductance VL Voltage across the inductor RL Inductor DC resistance VRL Voltage across RL RP Resistor in parallel to the inductive load VRP Voltage across RP iP Current through RP iL Current through the inductor IL0 Inductor current right before the turn-off phase: IL0 = IL(t=0) EDEMAG_LS Demagnetization energy of a low-side: dissipated energy in the low-side EDEMAG1_HS Demagnetization energy of a high-side when VBAT ≤ VCL_LS - VCL_HS EDEMAG2_HS Demagnetization energy of a high-side when VBAT ≥ VCL_LS - VCL_HS tDEMAG_LS Demagnetization time of a low-side tDEMAG1_HS Demagnetization time of a high-side when VBAT ≤ VCL_LS - VCL_HS tDEMAG2_HS Demagnetization time of a high-side when VBAT ≥ VCL_LS - VCL_HS |
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