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UM1556 데이터시트(PDF) 49 Page - STMicroelectronics

부품명 UM1556
상세설명  VIPower M0-5 and M0-5Enhanced
PDF  87 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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UM1556 데이터시트(HTML) 49 Page - STMicroelectronics

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UM1556
Switching inductive loads
Doc ID 023520 Rev 2
49/87
The HSD channel is protected directly by the parallel transil. The clamping voltage of the
transil should be below the minimum clamping voltage of the HSD (41 V). Such transils
(VCL < 41 V) usually start conducting at 30 V, therefore there is a high probability that it is
damaged during the clamped load dump pulse (36 V). For that reason it is usually better to
use the previously described solution (1).
3) Freewheeling diode and reverse battery diode
A general purpose diode connected in parallel with the load provides a conductive path for
proper demagnetization. Relatively small demagnetization voltage (1 diode voltage drop in
forward direction) leads to a very slow demagnetization. This can have a negative influence
when driving the relay, for example. A slow movement of the armature (slow opening of
contacts) can have a negative influence on the lifetime of the relay contacts (depending on
the switching current).
In order to protect the freewheeling diode against the reverse battery condition, there is an
additional diode (Dr) required in series with the output. This circuitry is suitable only for small
loads because of permanent voltage drop (
→ power dissipation) on Dr during normal
operation.
4) Freewheeling diode and reverse battery P-channel MOS circuitry
L
R
Vbat
GND
OUT
Rgnd
Dgnd
GND
GND
Clamp
Vout
Iout
T
L
R
Vbat
GND
OUT
Rgnd
Dgnd
GND
GND
Clamp
Vout
Iout
GND
D
Dr



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