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AN2503 데이터시트(PDF) 23 Page - STMicroelectronics

부품명 AN2503
상세설명  PDP Power Devices
PDF  30 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2503 데이터시트(HTML) 23 Page - STMicroelectronics

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AN2503
PDP Power Devices characteristics
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Figure 24.
Gate driver topology with L6385
Figure 25.
Gate driver topology – L6388
Due to current value in bootstrap charge, the internal diode cannot be used, thus external
diode SMBY01-400 [20.] must be used. Further details on L6585 and L6588 application can
be found in [18.] and [19.].
4.3.1
Totem pole
In order to match inherent power devices characteristics, (as high gate charge) with drivers
current capability, totem pole STS01DTP06 [21.] in a push pull configuration is used in the
application. The STS01DTP06 is housed in the SMD dual island SO-8 package and allows
an optimized electronic solutions, by improving circuit efficiency, saving space and reducing
component count on the board.
The STS01DTP06 is a hybrid complementary NPN and PNP bipolar transistor
manufactured using the latest low voltage planar technology. Extremely efficient
performance is obtained by combining high pulse current, excellent gain and fast speed,
Vcc
HIN
LIN
GND
1
3
2
4
OUT
HVG
Vboot
8
7
6
5
LVG
VCC
L638x
VCC
TO PLASMA
Vs
Vs
Vs
Vs
Vcc
HIN
LIN
GND
1
3
2
4
OUT
HVG
Vboot
8
7
6
5
LVG
VCC
L638x
VCC
Vs/2
Vs/2
PP
PP
PP
PP
pgy
Vcc
HIN
LIN
GND
1
3
2
4
OUT
HVG
Vboot
8
7
6
5
LVG
VCC
L638x
VCC
TO PLASMA
Vs
Vs
Vs
Vcc
HIN
LIN
GND
1
3
2
4
OUT
HVG
Vboot
8
7
6
5
LVG
VCC
L638x
VCC
Vs/2
PP
PP
PP
PP



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