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AN3372 데이터시트(PDF) 18 Page - STMicroelectronics

부품명 AN3372
상세설명  This note describes digital ballast for 70 W HID lamps
PDF  37 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3372 데이터시트(HTML) 18 Page - STMicroelectronics

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PFC design rules
AN3372
18/37
Doc ID 018625 Rev 1
For this application boost inductance of 1 mH has been chosen.
6.3.4
Power MOSFET selection
For Power MOSFET selection the breakdown voltage and the RDS(on) must be considered.
The MOSFET used in this section is the STF11NM60ND.
Thermal measurements have confirmed this as the right choice for this device.
6.3.5
Boost diode selection
The PFC section is realized with a boost converter working in transition mode. The
STTHxL06 family, which is using ST Turbo2 600 V technology, is specially suited as the
boost diode in discontinuous or transition mode power factor corrections.
The selection criteria is based on breakdown voltage and current. A rough selection can be
performed adopting the following criterion:
●
The breakdown voltage must be higher than (Vout +
ΔVop) +margin
●
The diode current must be higher than 3 times the average current Iout.
In this case STTH1L06 has been chosen.
The average diode current is:
Equation 10
Use the following equation to evaluate the conduction losses:
Equation 11
Considering Tjmax = 150 °C and the maximum ambient temperature Tambmax = 50 °C, it is
possible to calculate the RTHJ-amb as follows:
Equation 12
The calculated Rth is higher than the STTH1L06 (diode RTj-a =70 °C/W) thermal resistance
junction-ambient, so no heatsink is needed.
In any case, thermal measurement confirms the real device temperature.
A
18
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50
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