UI6008 datasheet(1/4 Pages) UNITPOWER

부품명	UI6008

상세설명	N-Ch 60V Fast Switching MOSFETs

PDF	4 Pages

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제조업체	UNITPOWER [Unitpower Technology Limited]

홈페이지	http://www.unitpower.cn

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UI6008

N-Ch 60V Fast Switching MOSFETs

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Sou

rce Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V

1

10

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V

1

7

A

ID@TA=25℃

Continuous Drain Current, VGS @ 10V

1

3.4

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V

1

2.7

A

IDM

Pulsed Drain Current

2

20

A

EAS

Single Pulse Avalanche Energy

3

10.7

mJ

IAS

Avalanche Current

11.2

A

PD@TC=25℃

Total Power Dissipation

4

20.8

W

PD@TA=25℃

Total Power Dissipation

4

2

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-Ambient

1

---

62

℃

/W

RθJC

Thermal Resistance Junction-Case

1

---

6

℃

/W

ID

60V

90mΩ

10A

The UI6008 is the highest performance trench

N-ch MOSFETs with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the synchronous buck converter

applications .

The UI6008 meet the RoHS and Green Product

requirement , 100% EAS guaranteed with full

function reliability approved.

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

TO251 Pin Configuration

Product Summery

BVDSS

RDS(ON)

유사한 부품 번호 - UI6008

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SHENZHEN DOINGTER SEMIC...	UI6008	1Mb / 4P	N-Channel MOSFET uses advanced trench technology

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