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AN487 데이터시트(PDF) 13 Page - STMicroelectronics |
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AN487 데이터시트(HTML) 13 Page - STMicroelectronics |
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13 / 13 page ![]() Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2003 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com 13/13 AN487 APPLICATION NOTE Table 1. THERMAL PROTECTION The thermal protection function operates when the junction temperature reaches 150°C; it acts directly on the power soft start capacitor, discharging it. The thermal protection is provided with hysteresis and there- fore, after an intervention has occurred, it is necessary to wait for the junction temperature to decrease of about 30°C below the intervention threshold. Figure 26. Gate-charge curve for the power DMOS. BVDSS > 60V at ID = 1mA VGS = 0V RDS(ON) = 100mΩ at ID = 10A Tj = 25°C VGS = 10V RDS(ON) = 150mΩ at ID = 10A Tj = 150°C VGS = 10V VTH = 3V at ID = 1mA |
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