IRF7350 datasheet(1/16 Pages) IRF

부품명	IRF7350

상세설명	Power MOSFET(Vdss=-100V)

PDF	16 Pages

Scroll/Zoom	100%

제조업체	IRF [International Rectifier]

홈페이지	http://www.irf.com

Logo

1 / 16 page

HEXFET® Power MOSFET

Description

08/09/01

www.irf.com

1

IRF7350

SO-8

Symbol

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

–––

20

RθJA

Junction-to-Ambient

–––

62.5

°C/W

Thermal Resistance

N-Ch

P-Ch

VDSS 100V

-100V

RDS(on) 0.21Ω

0.48

Ω

D1

N- CHA NNE L M O S FE T

P -CHA NNE L M O S F E T

D1

D2

G1

S2

G2

S1

T op V iew

8

1

2

3

4

5

6

7

These dual N and P channel HEXFET® power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET® power MOSFETs are

well known for, provides the designer with an extremely efficient and reliable

device for use in DC motor drives and load management applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety

of power applications. With these improvements, multiple devices can be

used in an application with dramatically reduced board space. The package

is designed for vapor phase, infra red, or wave soldering techniques.

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Available in Tape and Reel

Parameter

Units

A

Absolute Maximum Ratings

Max.

N-Channel

P-Channel

VDS

Drain-to-Source Voltage

100

-100

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

2.1

-1.5

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

1.7

-1.2

IDM

Pulsed Drain Current

8.4

-6.0

PD @TA = 25°C

Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

EAS

Single Pulse Avalanche Energy

35

51

mJ

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt

4.0

4.3

V/ns

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

PD - 94226B

유사한 부품 번호 - IRF7350

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRF7350PBF	308Kb / 16P	HEXFET짰 Power MOSFET
	IRF7350PBF	314Kb / 16P	Ultra Low On-Resistance
	IRF7350TRPBF	314Kb / 16P	Ultra Low On-Resistance

More results

유사한 설명 - IRF7350

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRC503	226Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
	IRF520V	200Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
	IRF5210S	186Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
	IRF540NS	125Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)
	IRF7473	196Kb / 8P	Power MOSFET(Vdss=100V, iD=6.9A)
	IRF9530N	113Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
	IRFD120	176Kb / 6P	Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A)
	IRFD9110	173Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)
	IRFD9120	173Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A)
	IRFRU3910	141Kb / 10P	Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

More results

IRF7350 데이터시트(PDF) 1 Page - International Rectifier

IRF7350 데이터시트(HTML) 1 Page - International Rectifier

유사한 부품 번호 - IRF7350

유사한 설명 - IRF7350

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

데이터시트 다운로드

링크 URL