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L6207 데이터시트(PDF) 10 Page - STMicroelectronics

부품명 L6207
상세설명  APPLICATION NOTE
PDF  53 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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L6207 데이터시트(HTML) 10 Page - STMicroelectronics

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AN1762 APPLICATION NOTE
10/53
Nevertheless, sensing resistor power rating should be chosen taking into account the peak value of the dissi-
pated power:
,
where Ipk is the peak value of the load current.
Using multiple resistors in parallel will help obtaining the required power rating with standard resistors, and re-
duce the inductance.
RSENSE tolerance reflects on the peak current error: 1% resistors should be preferred.
The following table shows RSENSE recommended values (to have 0.5V drop on it) and power ratings for typical
examples of current peak values.
3.6 Charge pump external components
An internal oscillator, with its output at
CP pin, switches from GND to 10V with a typical frequency of 600kHz
(see Figure 9).
Figure 9. Charge Pump.
When the oscillator output is at ground, C5 is charged by VS through D2. When it rises to 10V, D2 is reverse
biased and the charge flows from C5 to C8 through D1, so the VBOOT pin, after a few cycles, reaches the max-
imum voltage of VS + 10V - VD1 - VD2, which supplies the high-side gate drivers.
With a differential voltage between VS and VBOOT of about 9V and both the bridges switching at 50kHz, the typ-
ical current drawn by the VBOOT pin is 1.85 mA.
Ipk
RSENSE Value [Ω]
RSENSE Power Rating [W]
Alternatives
0.5
1
0.25
1
0.5
0.5
2 X 1
Ω, 0.25W paralleled
1.5
0.33
0.75
3 X 1
Ω, 0.25W paralleled
2
0.25
1
4 X 1
Ω, 0.25W paralleled
P
R
I
pk
2
R
SEN SE
⋅
≈
L6205, L6206, L6207
VS + 10 V - VD1
VS -VD1
f = 600 kHz
VSA
VSB
VBOOT
CP
D1
D2
R4
C8
C5
RDS(ON) = 70
Ω
10 V
10 V
5 V
RDS(ON) = 70
Ω
To High-Side
Gate Drivers
10 V
f = 600 kHz
Charge Pump
Oscillator
VS + 10 V - VD1 - VD2



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