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AN1882 데이터시트(PDF) 13 Page - STMicroelectronics |
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AN1882 데이터시트(HTML) 13 Page - STMicroelectronics |
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13 / 30 page ![]() AN1882 Short-circuit protection Doc ID 10209 Rev 4 13/30 Figure 10. Equivalent circuit during the OFF time Considering the figures above, in particular during the OFF time, in despite of the output voltage is zero, the output current generates, on the parasitic resistances, the voltage drop necessary to produce a negative slope. So, the higher will be the output current, the higher will be the negative slope during the OFF time; in this way, the inductor current will find a stable value. This value is given by: Equation 6 where TMIN is the minimum ON time, FSW is the switching frequency, RN and RP are the ON resistance of the low side and high side MOSFETs respectively, RL is the inductor series resistance and RO is the equivalent output resistance. As it can be seen, in these extreme conditions, the maximum current value depends both on the application conditions (like VIN and FSW), the inductor parasitic resistor RL, and the MOSFETS RDS(on) RN and RP. It does not depend on the peak current limit at all. In order to limit the output current to a safe value even in extreme short-circuit conditions, a current limit has also been introduced on the low side MOSFET: this operates as a valley current limit, as shown in Figure 11. The high side MOSFET does not turn-on until the inductor current exceeds the valley current limit. This implies that, depending on the over current conditions, the device skips some cycles, so reducing the equivalent switching frequency in order to limit the output current. With this approach, the maximum peak current is definitively limited to: Equation 7 I LIM V IN T MIN F SW ⋅ () ⋅ R N R L + () 1T MIN F SW ⋅ – () R P R L + () T MIN F SW ⋅ () ⋅ + ⋅ [] ------------------------------------------------------------------------------------------------------------------------------------------------------ = I LIM I VALLEY V INTMIN L ---------------------- + = |
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